1N5177W features low forward voltage drop guard ring constuction for transient protection fast switching time low reverse capacitance unit: mm sod-123 3.7 +0.1 -0.1 2.7 +0.1 -0.1 0.55 +0.1 -0.1 0.1max 1.6 +0.1 -0.1 0.50 0.35 1.1 +0.05 -0.05 0.1 +0.05 -0.02 marking marking sa absolute maximum ratings ta = 25 paramater symbol value unit peak repetitive reverse voltage v rrm working peak reverse voltage v rwm dc blocking volatge v r rms reverse voltage v r(rms) 49 v maximum forward current i fm 15 ma power dissipation (note1) p d 333 mw thermal resistance, junction to ambient air (note 1) i ja 300 /w operating temperature range t j -55 to+125 storage temperature range t stg -55 to+150 note: 1. part mounted on fr-4 board with recommended pad layout. 70 v electrical characteristics ta = 25 characteristic symbol test condition min typ max unit reverse breakdown voltage (note 2) v (br)r i r =10 a 70 v reverse leakage current (note2) i r v r = 50 v 200 na i f = 1.0 ma 0.41 i f =15ma 1.00 total capacitance c t v r = 0v, f = 1.0 mhz 2.0 pf i f =i r =5.0ma irr = 0.1 x i r ,r l = 100 note: 2. short duration test pulse used to minimize self-heating effect. v f v reverse recovery time trr 1.0 ns forward voltage drop (note2) sales@twtysemi.com 1 of 1 http://www.twtysemi.com product specification 4008-318-123
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